AO3415 general description product summary -20v i d (at v gs =-4.5v) -4a r ds(on) (at v gs = -4.5v) < 41m w r ds(on) (at v gs = -2.5v) < 53m w r ds(on) (at v gs = -1.8v) < 65m w esd protected symbol v ds v -20 absolute maximum ratings t a =25c unless otherwise noted drain-source voltage the AO3415 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable fo r use as a load switch applications. v ds 20v p-channel mosfet units maximum parameter d g s sot23 top view bottom view s g d v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl v -20 drain-source voltage 8 gate-source voltage t a =25c t a =70c -3.5 c/w r q ja 65 85 80 -30 pulsed drain current c c/w c/w 100 43 52 thermal characteristics p d t a =25c 1 units c max -55 to 150 w 1.5 v t a =70c i d -4 continuous drain current a maximum junction-to-lead parameter typ junction and storage temperature range maximum junction-to-ambient a d maximum junction-to-ambient a power dissipation b rev 7: sep 2011 www.aosmd.com page 1 of 5
AO3415 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.3 -0.57 -0.9 v i d(on) -30 a 34 41 t j =125c 49 59 42 53 m w 52 65 m w 61 m w g fs 20 s v sd -0.64 -1 v i s -2 a c iss 600 751 905 pf c oss 80 115 150 pf c rss 48 80 115 pf r g 6 13 20 w q g 7.4 9.3 11 nc q gs 0.8 1 1.2 nc q gd 1.3 2.2 3.1 nc t 13 ns i dss zero gate voltage drain current m a electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 m a, v gs =0v gate-body leakage current v ds =0v, v gs = 8v v ds =v gs , i d =-250 ma on state drain current v gs =-4.5v, v ds =-5v r ds(on) static drain-source on-resistance v gs =-4.5v, i d =-4a m w v gs =-2.5v, i d =-4a v gs =-1.8v, i d =-2a v gs =-1.5v, i d =-1a forward transconductance v ds =-5v, i d =-4a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-4a gate source charge gate drain charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on delaytime t d(on) 13 ns t r 9 ns t d(off) 19 ns t f 29 ns t rr 20 26 32 ns q rr 40 51 62 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-4a, di/dt=500a/ m s turn-on delaytime v gs =-4.5v, v ds =-10v, r l =2.5 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-4a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 7: sep 2011 www.aosmd.com page 2 of 5
AO3415 typical electrical and thermal characteristics 0 3 6 9 12 15 0 0.5 1 1.5 2 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 25 c 125 c v ds =-5v v gs =-1.8v v gs =-4.5v 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2.0v - 4.5v - 8v -2.5v -3.0v v gs =-2.5v v gs =-1.5v i d =-4a, v gs =-4.5v i d =-4a, v gs =-2.5v i d =-2a, v gs =-1.8v voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 20 40 60 80 100 120 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d = - 4a 25 c 125 c rev 7: sep 2011 www.aosmd.com page 3 of 5
AO3415 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-4a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms t j(max) =150 c t a =25 c ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =100 c/w t on t p d rev 7: sep 2011 www.aosmd.com page 4 of 5
AO3415 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt rr q = - idt t rr -isd f -i v dc d u t v dd vgs v ds v gs r l r g resistive switching test circuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) ig v gs - + v d c isd di/dt r m v dd v dd -vds -i rev 7: sep 2011 www.aosmd.com page 5 of 5
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